Apparatus and method for measurement of the mechanical properties and electromigration of thin films

Maris, Humphrey J

Title: Apparatus and method for measurement of the mechanical properties and electromigration of thin films

Patent · Sat Jan 01 00:00:00 EST 2000

OSTI ID:872860

Maris, Humphrey J ^[1]

Barrington, RI

A method for characterizing a sample comprising the steps of depositing the sample on a substrate, measuring a first change in optical response of the sample, changing the lateral strain of the sample, measuring a second change in optical response of the sample, comparing the second change in optical response of with the first change in optical response and associating a difference between the second change and the first change in optical response with a property of interest in the sample. The measurement of the first change in optical response is made with the sample having an initial lateral strain. The measurement of the second change in optical response is made after the lateral strain in the sample is changed from the initial lateral strain to a different lateral strain. The second change in optical response is compared to the first change in optical response to find the difference between the second change and the first change.

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Research Organization:: Brown Univ., Providence, RI (United States)

DOE Contract Number:: FG02-86ER45267

Assignee:: Brown University Research Foundation (Providence, RI)

Patent Number(s):: US 6025918

OSTI ID:: 872860

Country of Publication:: United States

Language:: English

References (39)

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Sound velocity and index of refraction of AlAs measured by picosecond ultrasonics Grahn, H. T.; Young, D. A.; Maris, H. J. Applied Physics Letters, Vol. 53, Issue 21 https://doi.org/10.1063/1.100309	journal	November 1988
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Analysis of lattice defects induced by ion implantation with photo‐acoustic displacement measurements Sumie, Shingo; Takamatsu, Hiroyuki; Morimoto, Tsutomu Journal of Applied Physics, Vol. 76, Issue 10 https://doi.org/10.1063/1.357074	journal	November 1994
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Thermal and plasma wave depth profiling in silicon Opsal, Jon; Rosencwaig, Allan Applied Physics Letters, Vol. 47, Issue 5 https://doi.org/10.1063/1.96105	journal	September 1985
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Related Subjects

apparatus
method
measurement
mechanical
properties
electromigration
films
characterizing
sample
comprising
steps
depositing
substrate
measuring
change
optical
response
changing
lateral
strain
comparing
associating
difference
property
initial
changed
compared
optical response
mechanical properties
sample comprising
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Title: Apparatus and method for measurement of the mechanical properties and electromigration of thin films

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