Capacitance pressure sensor
- Tijeras, NM
- Albuquerque, NM
A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Number(s):
- US 6012336
- OSTI ID:
- 872803
- Country of Publication:
- United States
- Language:
- English
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report | September 1996 |
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Related Subjects
pressure
sensor
microelectromechanical
integrated
electronic
circuitry
common
substrate
method
forming
device
disclosed
formed
partially
cavity
etched
below
surface
silicon
adjacent
cmos
bicmos
bipolar
planarized
chemical-mechanical
polishing
standard
set
circuit
processing
steps
form
aluminum
aluminum-alloy
interconnect
metallization
chemical-mechanical polishing
common substrate
capacitance pressure
electronic circuit
silicon substrate
integrated circuit
electronic circuitry
pressure sensor
processing steps
processing step
cavity etched
mechanical polishing
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