Giant magnetoresistive sensor
Patent
·
OSTI ID:872761
- Los Altos, CA
- Pleasanton, CA
- Livermore, CA
- Modesto, CA
A magnetoresistive sensor element with a three-dimensional micro-architecture is capable of significantly improved sensitivity and highly localized measurement of magnetic fields. The sensor is formed of a multilayer film of alternately magnetic and nonmagnetic materials. The sensor is optimally operated in a current perpendicular to plane mode. The sensor is useful in magnetic read/write heads, for high density magnetic information storage and retrieval.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 6002553
- OSTI ID:
- 872761
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
giant
magnetoresistive
sensor
element
three-dimensional
micro-architecture
capable
significantly
improved
sensitivity
highly
localized
measurement
magnetic
fields
formed
multilayer
film
alternately
nonmagnetic
materials
optimally
operated
current
perpendicular
plane
mode
useful
write
heads
density
information
storage
retrieval
sensor element
significantly improved
improved sensitivity
multilayer film
magnetoresistive sensor
magnetic materials
magnetic field
magnetic fields
magnetic material
giant magnetoresistive
information storage
write head
significantly improve
highly localized
/360/
magnetoresistive
sensor
element
three-dimensional
micro-architecture
capable
significantly
improved
sensitivity
highly
localized
measurement
magnetic
fields
formed
multilayer
film
alternately
nonmagnetic
materials
optimally
operated
current
perpendicular
plane
mode
useful
write
heads
density
information
storage
retrieval
sensor element
significantly improved
improved sensitivity
multilayer film
magnetoresistive sensor
magnetic materials
magnetic field
magnetic fields
magnetic material
giant magnetoresistive
information storage
write head
significantly improve
highly localized
/360/