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Title: Conductive metal oxide film and method of making

Abstract

The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.

Inventors:
 [1]
  1. Richland, WA
Publication Date:
Research Org.:
Pacific Northwest National Laboratory (PNNL), Richland, WA (United States)
OSTI Identifier:
872690
Patent Number(s):
US 5990416
Assignee:
Battelle Memorial Institute (Richland, WA)
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
conductive; metal; oxide; film; method; reducing; dopant; reduced; substantially; relies; exposing; conditions; predetermined; time; valence; positive; zero; maintaining; atoms; atomic; configuration; lattice; structure; according; exposure; achieved; electrochemically; elevated; temperature; gas; phase; temperature gas; predetermined time; gas phase; metal oxide; elevated temperature; oxide film; conductive metal; lattice structure; reducing conditions; positive valence; determined time; /136/438/

Citation Formats

Windisch, Jr., Charles F., and Exarhos, Gregory J. Conductive metal oxide film and method of making. United States: N. p., 1999. Web.
Windisch, Jr., Charles F., & Exarhos, Gregory J. Conductive metal oxide film and method of making. United States.
Windisch, Jr., Charles F., and Exarhos, Gregory J. 1999. "Conductive metal oxide film and method of making". United States. https://www.osti.gov/servlets/purl/872690.
@article{osti_872690,
title = {Conductive metal oxide film and method of making},
author = {Windisch, Jr., Charles F. and Exarhos, Gregory J},
abstractNote = {The present invention is a method for reducing a dopant in a film of a metal oxide wherein the dopant is reduced and the first metal oxide is substantially not reduced. The method of the present invention relies upon exposing the film to reducing conditions for a predetermined time and reducing a valence of the metal from a positive valence to a zero valence and maintaining atoms with a zero valence in an atomic configuration within the lattice structure of the metal oxide. According to the present invention, exposure to reducing conditions may be achieved electrochemically or achieved in an elevated temperature gas phase.},
doi = {},
url = {https://www.osti.gov/biblio/872690}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Fri Jan 01 00:00:00 EST 1999},
month = {Fri Jan 01 00:00:00 EST 1999}
}

Works referenced in this record:

The Influence of Preparation on Semiconducting Rutile  ( TiO2 ) 
journal, May 1980


Optical Properties of Aluminum Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
journal, August 1985


Electrochemically Reduced Polycrystalline Tin Oxide Thin Films: Surface Analysis and Electroplated Copper Adhesion
journal, June 1996


Reduction of CO[sub 2] on Fluorine-Doped SnO[sub 2] Thin-Film Electrodes
journal, January 1992