CaTiO.sub.3 Interfacial template structure on semiconductor-based material and the growth of electroceramic thin-films in the perovskite class
- Kingston, TN
- Oak Ridge, TN
A structure including a film of a desired perovskite oxide which overlies and is fully commensurate with the material surface of a semiconductor-based substrate and an associated process for constructing the structure involves the build up of an interfacial template film of perovskite between the material surface and the desired perovskite film. The lattice parameters of the material surface and the perovskite of the template film are taken into account so that during the growth of the perovskite template film upon the material surface, the orientation of the perovskite of the template is rotated 45.degree. with respect to the orientation of the underlying material surface and thereby effects a transition in the lattice structure from fcc (of the semiconductor-based material) to the simple cubic lattice structure of perovskite while the fully commensurate periodicity between the perovskite template film and the underlying material surface is maintained. The film-growth techniques of the invention can be used to fabricate solid state electrical components wherein a perovskite film is built up upon a semiconductor-based material and the perovskite film is adapted to exhibit ferroelectric, piezoelectric, pyroelectric, electro-optic or large dielectric properties during use of the component.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Assignee:
- Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
- Patent Number(s):
- US 5830270
- OSTI ID:
- 871947
- Country of Publication:
- United States
- Language:
- English
Fabrication of Barium Titanate/Strontium Titanate Artificial Superlattice by Atomic Layer Epitaxy
|
journal | September 1994 |
Perovskites
|
journal | June 1988 |
Atomic layer growth of oxide thin films with perovskite‐type structure by reactive evaporation
|
journal | October 1992 |
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interfacial
template
structure
semiconductor-based
material
growth
electroceramic
thin-films
perovskite
including
film
desired
oxide
overlies
commensurate
surface
substrate
associated
process
constructing
involves
build
lattice
parameters
account
orientation
rotated
45
degree
respect
underlying
effects
transition
fcc
simple
cubic
periodicity
maintained
film-growth
techniques
fabricate
solid
electrical
components
built
adapted
exhibit
ferroelectric
piezoelectric
pyroelectric
electro-optic
dielectric
properties
component
semiconductor-based material
structure including
electrical components
material surface
lattice structure
plate structure
lattice parameter
exhibit ferroelectric
dielectric properties
perovskite oxide
electrical component
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