Regenerative switching CMOS system
- 10328 Pinehurst Ave., Omaha, NE 68124
Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.
- Research Organization:
- James D Welch
- DOE Contract Number:
- FG47-93R701314
- Assignee:
- Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)
- Patent Number(s):
- US 5760449
- OSTI ID:
- 871599
- Country of Publication:
- United States
- Language:
- English
Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
|
journal | December 1976 |
Metallurgical and electrical properties of chromium silicon interfaces
|
journal | January 1980 |
Compound formation between amorphous silicon and chromium
|
journal | December 1980 |
SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
|
journal | January 1968 |
The metal-semiconductor contact: an old device with a new future
|
journal | March 1970 |
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