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Title: System for characterizing semiconductor materials and photovoltaic devices through calibration

Patent ·
OSTI ID:871581
 [1];  [2];  [3];  [4];  [3]
  1. Denver, CO
  2. Arvada, CO
  3. Littleton, CO
  4. Golden, CO
+ Show Author Affiliations

A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.

Research Organization:
Midwest Research Institute, Kansas City, MO (United States)
DOE Contract Number:
AC36-83CH10093
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Number(s):
US 5757474
OSTI ID:
871581
Country of Publication:
United States
Language:
English

References (2)

A New Defect Etch for Polycrystalline Silicon journal January 1984
Use of optical scattering to characterize dislocations in semiconductors journal January 1988

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Related Subjects

characterizing
semiconductor
materials
photovoltaic
devices
calibration
method
apparatus
measuring
characteristics
piece
material
typically
including
dislocation
defect
density
grain
boundaries
reflectance
external
lbic
internal
minority
carrier
diffusion
length
light
source
integrating
sphere
detector
communicating
computer
measurement
calculation
calibrated
provide
accurate
absolute
values
performed
substituting
standard
sample
quantity
relevant
measured
characteristic
compared
constant
created
carrier diffusion
photovoltaic devices
diffusion length
grain boundaries
semiconductor materials
light source
semiconductor material
photovoltaic device
minority carrier
materials including
absolute value
provide accurate
integrating sphere
characterizing semiconductor
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