Preparation of a semiconductor thin film

Patent · Tue Jan 27 00:00:00 EST 1998

OSTI ID:871342

Pehnt, Martin ^[1]; Schulz, Douglas L ^[2]; Curtis, Calvin J ^[3]; Ginley, David S ^[4]

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1. TuBingen, DE
2. Denver, CO
3. Lakewood, CO
4. Evergreen, CO

A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC36-83CH10093
• Assignee: Midwest Research Institute (Kansas City, MO)
• Patent Number(s): US 5711803
• OSTI ID: 871342
• Country of Publication: United States
• Language: English

Related Subjects

preparation
semiconductor
film
process
comprises
depositing
nanoparticles
material
substrate
surface
temperature
nanoparticle
deposition
thereon
sufficient
substantially
simultaneous
fusion
coalesce
effectuate
growth
semiconductor film
film growth
particle deposition
semiconductor material
process comprises
comprises depositing
surface temperature
deposition thereon
substantially simultaneous
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