Sol-gel type synthesis of Bi.sub.2 (Sr,Ta.sub.2)O.sub.9 using an acetate based system

Boyle, Timothy J

Title: Sol-gel type synthesis of Bi.sub.2 (Sr,Ta.sub.2)O.sub.9 using an acetate based system

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:871211

Boyle, Timothy J ^[1]

Albuquerque, NM

A method of forming a layered-perovskite bismuth-strontium-tantalum oxide (SBT) ferroelectric material is performed by dissolving a bismuth compound in a first solvent to form a first solution, mixing a strontium compound and a tantalum compound to form a binary mixture, dissolving the binary mixture in a second solvent to form a second solution, mixing the first solution with the second solution to form a SBT precursor solution, evaporating the first and second solvents to form a SBT precursor material and subsequently sintering said SBT precursor material in the presence of oxygen.

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Research Organization:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Alburquerque, NM)

Patent Number(s):: US 5683614

OSTI ID:: 871211

Country of Publication:: United States

Language:: English

References (8)

Preparation of Pb(Zr,Ti)O ₃ thin films by sol gel processing: Electrical, optical, and electro‐optic properties Yi, Guanghua; Wu, Zheng; Sayer, Michael Journal of Applied Physics, Vol. 64, Issue 5 https://doi.org/10.1063/1.341613	journal	September 1988
Characteristics of Bismuth Layered S r B i ₂ T a ₂ O ₉ Thin-Film Capacitors and Comparison with P b ( Z r , T i ) O ₃ Mihara, Takashi; Yoshimori, Hiroyuki; Watanabe, Hitoshi Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 9B https://doi.org/10.1143/JJAP.34.5233	journal	September 1995
Characteristics of spin-on ferroelectric SrBi ₂ Ta ₂ O ₉ thin film capacitors for ferroelectric random access memory applications Chu, Peir Y.; Jones, Robert E.; Zurcher, Peter Journal of Materials Research, Vol. 11, Issue 5 https://doi.org/10.1557/JMR.1996.0133	journal	May 1996
Plzt thin films prepared from acetate precursors Haertling, Gene H. Ferroelectrics, Vol. 116, Issue 1 https://doi.org/10.1080/00150199108007929	journal	April 1991
Fatigue-free ferroelectric capacitors with platinum electrodes de Araujo, C. A-Paz; Cuchiaro, J. D.; McMillan, L. D. Nature, Vol. 374, Issue 6523 https://doi.org/10.1038/374627a0	journal	April 1995
Sol-gel and MOD processing of layered perovskite and SrTiO3 films Klee, M.; Mackens, U. Microelectronic Engineering, Vol. 29, Issue 1-4 https://doi.org/10.1016/0167-9317(95)00141-7	journal	December 1995
Solution Deposition of Ferroelectric Thin Films Tuttle, B. A.; Schwartz, R. W. MRS Bulletin, Vol. 21, Issue 6 https://doi.org/10.1557/S088376940004608X	journal	June 1996
Preparation of Ferroelectric Thin Films of Bismuth Layer Structured Compounds Watanabe, Hitoshi; Mihara, Takashi; Yoshimori, Hiroyuki Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 9B https://doi.org/10.1143/JJAP.34.5240	journal	September 1995

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Related Subjects

sol-gel
type
synthesis
sr
acetate
based
method
forming
layered-perovskite
bismuth-strontium-tantalum
oxide
sbt
ferroelectric
material
performed
dissolving
bismuth
compound
solvent
form
solution
mixing
strontium
tantalum
binary
mixture
precursor
evaporating
solvents
subsequently
sintering
presence
oxygen
precursor solution
precursor material
binary mixture
tantalum compound
ferroelectric material
tantalum oxide
/252/427/501/999/

Title: Sol-gel type synthesis of Bi.sub.2 (Sr,Ta.sub.2)O.sub.9 using an acetate based system

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References (8)

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