Process of preparing tritiated porous silicon

Patent · Wed Jan 01 00:00:00 EST 1997

OSTI ID:870840

Tam, Shiu-Wing ^[1]

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1. Downers Grove, IL

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL (United States)
• DOE Contract Number: W-31109-ENG-38
• Assignee: University of Chicago (Chicago, IL)
• Patent Number(s): US 5604162
• OSTI ID: 870840
• Country of Publication: United States
• Language: English

Related Subjects

process
preparing
tritiated
porous
silicon
equilibrated
gaseous
vapor
containing
gas
diluent
time
sufficient
tritium
phase
replace
hydrogen
pore
surfaces
tritiated porous
vapor containing
gas phase
porous silicon
time sufficient
preparing tritiated
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