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Title: Preparation of III-V semiconductor nanocrystals

Patent ·
OSTI ID:870368

Nanometer-scale crystals of III-V semiconductors are disclosed, They are prepared by reacting a group III metal source with a group V anion source in a liquid phase at elevated temperature in the presence of a crystallite growth terminator such as pyridine or quinoline.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC03-76SF00098
Assignee:
Regents of University of California (Oakland, CA)
Patent Number(s):
US 5505928
OSTI ID:
870368
Country of Publication:
United States
Language:
English

References (14)

Lattice reorganization in electronically excited semiconductor clusters journal March 1990
Electron–vibration coupling in semiconductor clusters studied by resonance Raman spectroscopy journal April 1989
Organometallic synthesis of gallium-arsenide crystallites, exhibiting quantum confinement journal December 1990
Electronic states of semiconductor clusters: Homogeneous and inhomogeneous broadening of the optical spectrum journal October 1988
Quarterly Chronicle and Documentation journal March 1988
Electroabsorption of highly confined systems: Theory of the quantum‐confined Franz–Keldysh effect in semiconductor quantum wires and dots journal June 1988
Zero-dimensional "excitons" in semiconductor clusters journal September 1986
Resonance Raman scattering and optical absorption studies of CdSe microclusters at high pressure journal November 1988
Electronic wave functions in semiconductor clusters: experiment and theory journal June 1986
A simple model for the ionization potential, electron affinity, and aqueous redox potentials of small semiconductor crystallites journal December 1983
Design of a Monomeric Arsinogallane and Chemical Conversion to Gallium Arsenide journal July 1988
Theory of the linear and nonlinear optical properties of semiconductor microcrystallites journal May 1987
Relation between electroabsorption in bulk semiconductors and in quantum wells: The quantum-confined Franz-Keldysh effect journal May 1986
GaAs Clusters in the Quantum Size Regime: Growth on High Surface Area Silica by Molecular Beam Epitaxy journal July 1989