Method of fabricating high-efficiency Cu(In,Ga)(SeS).sub.2 thin films for solar cells
- Golden, CO
- Boulder, CO
- Denver, CO
- Evergreen, CO
A process for producing a slightly Cu-poor thin film of Cu(In,Ga)(Se,S).sub.2 comprises depositing a first layer of (In,Ga).sub.x (Se,S).sub.y followed by depositing just enough Cu+(Se,S) or Cu.sub.x (Se,S) to produce the desired slightly Cu-poor material. In a variation, most, but not all, (about 90 to 99%) of the (In,Ga).sub.x (Se,S).sub.y is deposited first, followed by deposition of all the Cu+(Se,S) or Cu.sub.x (Se,S) to go near stoichiometric, possibly or even preferably slightly Cu-rich, and then in turn followed by deposition of the remainder (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y to end with a slightly Cu-poor composition. In yet another variation, a small portion (about 1 to 10%) of the (In,Ga).sub.x (Se,S).sub.y is first deposited as a seed layer, followed by deposition of all of the Cu+(Se,S) or Cu.sub.x (Se,S) to make a very Cu-rich mixture, and then followed deposition of the remainder of the (In,Ga).sub.x (Se,S).sub.y to go slightly Cu-poor in the final Cu(In,Ga)(Se,S).sub.2 thin film.
- Research Organization:
- Midwest Research Institute, Kansas City, MO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5441897
- Application Number:
- 08/197,204
- OSTI ID:
- 870025
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
fabricating
high-efficiency
cu
films
solar
cells
process
producing
slightly
cu-poor
film
comprises
depositing
layer
followed
produce
desired
material
variation
90
99
deposited
deposition
near
stoichiometric
possibly
preferably
cu-rich
remainder
10
composition
portion
seed
mixture
final
slightly cu-poor
solar cell
solar cells
comprises depositing
rich mixture
seed layer
near stoichiometric
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