Periodic dielectric structure for production of photonic band gap and method for fabricating the same
- Ames, IA
A method for fabricating a periodic dielectric structure which exhibits a photonic band gap. Alignment holes are formed in a wafer of dielectric material having a given crystal orientation. A planar layer of elongate rods is then formed in a section of the wafer. The formation of the rods includes the step of selectively removing the dielectric material of the wafer between the rods. The formation of alignment holes and layers of elongate rods and wafers is then repeated to form a plurality of patterned wafers. A stack of patterned wafers is then formed by rotating each successive wafer with respect to the next-previous wafer, and then placing the successive wafer on the stack. This stacking results in a stack of patterned wafers having a four-layer periodicity exhibiting a photonic band gap.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
- DOE Contract Number:
- W-7405-ENG-82
- Assignee:
- Iowa State University Research Foundation (Ames, IA)
- Patent Number(s):
- US 5406573
- OSTI ID:
- 869833
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
dielectric
structure
production
photonic
band
gap
method
fabricating
exhibits
alignment
holes
formed
wafer
material
crystal
orientation
planar
layer
elongate
rods
section
formation
step
selectively
removing
layers
wafers
repeated
form
plurality
patterned
stack
rotating
successive
respect
next-previous
placing
stacking
results
four-layer
periodicity
exhibiting
photonic band
dielectric structure
selectively removing
band gap
dielectric material
periodic dielectric
elongate rod
crystal orientation
alignment holes
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