Crystallization from high temperature solutions of Si in copper
- Evergreen, CO
A liquid phase epitaxy method for forming thin crystalline layers of device quality silicon having less than 5X10.sup.16 Cu atoms/cc impurity, comprising: preparing a saturated liquid solution melt of Si in Cu at about 16% to about 90% wt. Si at a temperature range of about 800.degree. C. to about 1400.degree. C. in an inert gas; immersing a substrate in the saturated solution melt; supersaturating the solution by lowering the temperature of the saturated solution melt and holding the substrate immersed in the solution melt for a period of time sufficient to cause growing Si to precipitate out of the solution to form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Number(s):
- US 5314571
- OSTI ID:
- 869314
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
temperature
solutions
copper
liquid
phase
epitaxy
method
forming
crystalline
layers
device
quality
silicon
5x10
16
cu
atoms
cc
impurity
comprising
preparing
saturated
solution
melt
90
wt
range
800
degree
1400
inert
gas
immersing
substrate
supersaturating
lowering
holding
immersed
period
time
sufficient
growing
precipitate
form
layer
withdrawing
saturated solution
device quality
liquid solution
time sufficient
temperature range
liquid phase
inert gas
phase epitaxy
saturated liquid
quality silicon
cc impurity
crystalline layer
temperature solutions
epitaxy method
cu atoms
crystalline layers
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