Yb:FAP and related materials, laser gain medium comprising same, and laser systems using same
Patent
·
OSTI ID:869131
- Pleasanton, CA
- Castro Valley, CA
- Livermore, CA
- Salida, CA
An ytterbium doped laser material remarkably superior to all others, including Yb:YAG, comprises Ytterbium doped apatite (Yb:Ca.sub.5 (PO.sub.4).sub.3 F) or Yb:FAP, or ytterbium doped crystals that are structurally related to FAP. The new laser material is used in laser systems pumped by diode pump sources having an output near 0.905 microns or 0.98 microns, such as InGaAs and AlInGaAs, or other narrowband pump sources near 0.905 microns or 0.98 microns. The laser systems are operated in either the conventional or ground state depletion mode.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- United States Department of Energy (Washington, DC)
- Patent Number(s):
- US 5280492
- OSTI ID:
- 869131
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
fap
related
materials
laser
medium
comprising
systems
ytterbium
doped
material
remarkably
superior
including
yag
comprises
apatite
crystals
structurally
pumped
diode
pump
sources
output
near
905
microns
98
ingaas
alingaas
narrowband
operated
conventional
ground
depletion
mode
medium comprising
related materials
pump sources
laser material
laser systems
ytterbium doped
structurally related
pump source
diode pump
doped laser
/372/
related
materials
laser
medium
comprising
systems
ytterbium
doped
material
remarkably
superior
including
yag
comprises
apatite
crystals
structurally
pumped
diode
pump
sources
output
near
905
microns
98
ingaas
alingaas
narrowband
operated
conventional
ground
depletion
mode
medium comprising
related materials
pump sources
laser material
laser systems
ytterbium doped
structurally related
pump source
diode pump
doped laser
/372/