Method of making an ion-implanted planar-buried-heterostructure diode laser

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868227

Brennan, Thomas M ^[1]; Hammons, Burrell E ^[2]; Myers, David R ^[1]; Vawter, Gregory A ^[1]

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1. Albuquerque, NM
2. Tijeras, NM

Planar-buried-heterostructure, graded-index, separate-confinement-heterostructure semiconductor diode laser 10 includes a single quantum well or multi-quantum well active stripe 12 disposed between a p-type compositionally graded Group III-V cladding lever 14 and an n-type compositionally graded Group III-V cladding layer 16. The laser 10 includes an iion implanted n-type region 28 within the p-type cladding layer 14 and further includes an ion implanted p-type region 26 within the n-type cladding layer 16. The ion implanted regions are disposed for defining a lateral extent of the active stripe.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5102825
• OSTI ID: 868227
• Country of Publication: United States
• Language: English

Related Subjects

method
ion-implanted
planar-buried-heterostructure
diode
laser
graded-index
separate-confinement-heterostructure
semiconductor
10
single
quantum
multi-quantum
active
stripe
12
disposed
p-type
compositionally
graded
iii-v
cladding
lever
14
n-type
layer
16
iion
implanted
region
28
26
regions
defining
lateral
extent
compositionally graded
diode laser
p-type region
n-type region
semiconductor diode
cladding layer
active stripe
lateral extent
separate-confinement-heterostructure semiconductor
single quantum
implanted region
planar-buried-heterostructure diode
ion-implanted planar-buried-heterostructure
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