I-III-VI.sub.2 based solar cell utilizing the structure CuInGaSe.sub.2 CdZnS/ZnO

Patent · Wed Jan 01 00:00:00 EST 1992

OSTI ID:868111

Chen, Wen S ^[1]; Stewart, John M ^[1]

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1. Seattle, WA

A thin film I-III-VI.sub.2 based solar cell having a first layer of copper indium gallium selenide, a second layer of cadmium zinc sulfide, a double layer of zinc oxide, and a metallization structure comprised of a layer of nickel covered by a layer of aluminum. An optional antireflective coating may be placed on said metallization structure. The cadmium zinc sulfide layer is deposited by means of an aqueous solution growth deposition process and may actually consist of two layers: a low zinc content layer and a high zinc content layer. Photovoltaic efficiencies of 12.5% at Air Mass 1.5 illumination conditions and 10.4% under AMO illumination can be achieved.

• DOE Contract Number: ZL-8-06031-8
• Assignee: Boeing Company (Seattle, WA)
• Patent Number(s): US 5078804
• Application Number: 07/569,411
• OSTI ID: 868111
• Country of Publication: United States
• Language: English

Related Subjects

i-iii-vi
based
solar
cell
utilizing
structure
cuingase
cdzns
zno
film
layer
copper
indium
gallium
selenide
cadmium
zinc
sulfide
double
oxide
metallization
comprised
nickel
covered
aluminum
optional
antireflective
coating
placed
deposited
means
aqueous
solution
growth
deposition
process
consist
layers
content
photovoltaic
efficiencies
12
air
mass
illumination
conditions
10
achieved
zinc sulfide
antireflective coating
indium gallium
reflective coating
cell utilizing
air mass
zinc oxide
solar cell
aqueous solution
deposition process
double layer
copper indium
cadmium zinc
solution growth
sulfide layer
based solar
/136/257/438/