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Title: Thick, low-stress films, and coated substrates formed therefrom

Abstract

Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.

Inventors:
 [1]
  1. Menomonee Falls, WI
Publication Date:
Research Org.:
Battelle Memorial Institute, Columbus, OH (United States)
OSTI Identifier:
868050
Patent Number(s):
US 5061574
Assignee:
Battelle Memorial Institute (Richland, WA)
DOE Contract Number:  
AC06-76RL01830
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
thick; low-stress; films; coated; substrates; formed; therefrom; stress-induced; deformation; damage; resulting; increases; film; thickness; overcoming; excessive; stress; material; permits; formation; described; applications; subject; materials; specialized; views; optical; microelectronic; packaging; components; silicon; si-al-o-n; excellent; adherence; underlying; substrate; degree; hardness; durability; insulators; prior; elevated; temperature; deposition; processes; meet; constraints; process; conducted; non-elevated; conditions; typically; 500; temperature deposition; formed therefrom; film materials; coated substrates; underlying substrate; silicon substrates; temperature conditions; thick film; film thickness; elevated temperature; silicon substrate; deposition process; film material; deposition processes; coated substrate; substrates formed; temperature formation; thick films; resulting therefrom; damage resulting; stress-induced deformation; induced deformation; excessive stress; low-stress films; /428/204/

Citation Formats

Henager, Jr., Charles H., and Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom. United States: N. p., 1991. Web.
Henager, Jr., Charles H., & Knoll, Robert W. Thick, low-stress films, and coated substrates formed therefrom. United States.
Henager, Jr., Charles H., and Knoll, Robert W. 1991. "Thick, low-stress films, and coated substrates formed therefrom". United States. https://www.osti.gov/servlets/purl/868050.
@article{osti_868050,
title = {Thick, low-stress films, and coated substrates formed therefrom},
author = {Henager, Jr., Charles H. and Knoll, Robert W},
abstractNote = {Stress-induced deformation, and the damage resulting therefrom, increases with film thickness. The overcoming of excessive stress by the use of the film material of the present invention, permits the formation of thick films that are necessary for certain of the above described applications. The most likely use for the subject film materials, other than their specialized views as an optical film, is for microelectronic packaging of components on silicon substrates. In general, the subject Si-Al-O-N films have excellent adherence to the underlying substrate, a high degree of hardness and durability, and are excellent insulators. Prior art elevated temperature deposition processes cannot meet the microelectronic packaging temperature formation constraints. The process of the present invention is conducted under non-elevated temperature conditions, typically 500# C. or less.},
doi = {},
url = {https://www.osti.gov/biblio/868050}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 1991},
month = {Tue Jan 01 00:00:00 EST 1991}
}