Formation of multiple levels of porous silicon for buried insulators and conductors in silicon device technologies

Patent · Tue Jan 01 00:00:00 EST 1991

OSTI ID:867864

Blewer, Robert S ^[1]; Gullinger, Terry R ^[1]; Kelly, Michael J ^[1]; Tsao, Sylvia S ^[1]

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1. Albuquerque, NM

A method of forming a multiple level porous silicon substrate for semiconductor integrated circuits including anodizing non-porous silicon layers of a multi-layer silicon substrate to form multiple levels of porous silicon. At least one porous silicon layer is then oxidized to form an insulating layer and at least one other layer of porous silicon beneath the insulating layer is metallized to form a buried conductive layer. Preferably the insulating layer and conductive layer are separated by an anodization barrier formed of non-porous silicon. By etching through the anodization barrier and subsequently forming a metallized conductive layer, a fully or partially insulated buried conductor may be fabricated under single crystal silicon.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 5023200
• OSTI ID: 867864
• Country of Publication: United States
• Language: English

Related Subjects

formation
multiple
levels
porous
silicon
buried
insulators
conductors
device
technologies
method
forming
level
substrate
semiconductor
integrated
circuits
including
anodizing
non-porous
layers
multi-layer
form
layer
oxidized
insulating
beneath
metallized
conductive
preferably
separated
anodization
barrier
formed
etching
subsequently
partially
insulated
conductor
fabricated
single
crystal
silicon device
silicon layer
porous silicon
silicon substrate
integrated circuits
integrated circuit
single crystal
insulating layer
conductive layer
crystal silicon
silicon layers
multiple levels
circuits including
semiconductor integrated
form multiple
multiple level
barrier formed
layer silicon
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