Semiconductor laser devices having lateral refractive index tailoring

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867574

Ashby, Carol I. H. ^[1]; Hadley, G Ronald ^[2]; Hohimer, John P ^[3]; Owyoung, Adelbert ^[3]

---

1. Edgewood, NM
2. Alburquerque, NM
3. Albuquerque, NM

A broad-area semiconductor laser diode includes an active lasing region interposed between an upper and a lower cladding layer, the laser diode further comprising structure for controllably varying a lateral refractive index profile of the diode to substantially compensate for an effect of junction heating during operation. In embodiments disclosed the controlling structure comprises resistive heating strips or non-radiative linear junctions disposed parallel to the active region. Another embodiment discloses a multi-layered upper cladding region selectively disordered by implanted or diffused dopant impurities. Still another embodiment discloses an upper cladding layer of variable thickness that is convex in shape and symmetrically disposed about a central axis of the active region. The teaching of the invention is also shown to be applicable to arrays of semiconductor laser diodes.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4965806
• OSTI ID: 867574
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
laser
devices
lateral
refractive
index
tailoring
broad-area
diode
active
lasing
region
interposed
upper
cladding
layer
comprising
structure
controllably
varying
profile
substantially
compensate
effect
junction
heating
operation
embodiments
disclosed
controlling
comprises
resistive
strips
non-radiative
linear
junctions
disposed
parallel
embodiment
discloses
multi-layered
selectively
disordered
implanted
diffused
dopant
impurities
variable
thickness
convex
shape
symmetrically
central
axis
teaching
shown
applicable
arrays
diodes
lasing region
laser device
resistive heating
disposed parallel
laser diodes
semiconductor laser
central axis
active region
laser diode
refractive index
cladding layer
structure comprises
symmetrically disposed
variable thickness
comprising structure
lateral refractive
index profile
broad-area semiconductor
active lasing
dopant impurities
controllably varying
/372/