Method and making group IIB metal - telluride films and solar cells
- Redondo Beach, CA
- Northridge, CA
A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.
- DOE Contract Number:
- XL-7-06074-2
- Assignee:
- International Solar Electric Technology, Inc. (Inglewood, CA)
- Patent Number(s):
- US 4950615
- Application Number:
- 07/306,469
- OSTI ID:
- 867501
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin film cadmium telluride, zinc telluride, and mercury zinc telluride solar cells. Final subcontract report, 1 July 1988--31 December 1991
Thin Film Cadmium Telluride, Zinc Telluride, and Mercury Zinc Telluride Solar Cells, Final Subcontract Report, 1 July 1988 - 31 December 1991
Related Subjects
iib
metal
telluride
films
solar
cells
technique
disclosed
forming
13
metal-telluride
cd
zn
1-x
ltoreq
substrate
10
comprises
depositing
18
elements
19
hg
heating
form
provided
doping
material
chemically
layer
dopant
surface
unreacted
fabricating
film
photovoltaic
cell
contains
semiconductor
12
presence
halide
metals
causing
formation
grade
rectifying
junction
situ
formed
semiconductor film
solar cell
solar cells
film photovoltaic
photovoltaic cell
comprises depositing
rectifying junction
closed form
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