Semiconductor devices incorporating multilayer interference regions

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867481

Biefeld, Robert M ^[1]; Drummond, Timothy J ^[2]; Gourley, Paul L ^[1]; Zipperian, Thomas E ^[1]

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1. Albuquerque, NM
2. Tijeras, NM

A semiconductor high reflector comprising a number of thin alternating layers of semiconductor materials is electrically tunable and may be used as a temperature insensitive semiconductor laser in a Fabry-Perot configuration.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4947223
• OSTI ID: 867481
• Country of Publication: United States
• Language: English

Related Subjects

semiconductor
devices
incorporating
multilayer
interference
regions
reflector
comprising
alternating
layers
materials
electrically
tunable
temperature
insensitive
laser
fabry-perot
configuration
semiconductor laser
alternating layers
semiconductor materials
semiconductor material
semiconductor device
semiconductor devices
devices incorporating
temperature insensitive
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