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Title: Stacked silicide/silicon mid- to long-wavelength infrared detector

Patent ·
OSTI ID:867302
 [1]
  1. Goleta, CA
+ Show Author Affiliations

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Assignee:
California Institute of Technology (Pasadena, CA)
Patent Number(s):
US 4908686
Application Number:
07/226,754
OSTI ID:
867302
Country of Publication:
United States
Language:
English

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Related Subjects

stacked
silicide
silicon
mid-
long-wavelength
infrared
detector
schottky
barriers
16
epitaxially
grown
silicides
10
combined
selective
doping
22
provides
quantum
efficiency
detectors
30
wavelengths
compatible
existing
vlsi
technology
infrared detector
schottky barrier
quantum efficiency
epitaxially grown
schottky barriers
/257/