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Title: Photoconductive circuit element reflectometer

Patent ·
OSTI ID:867253

A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
DOE Contract Number:
W-7405-ENG-36
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
Patent Number(s):
US 4896109
OSTI ID:
867253
Country of Publication:
United States
Language:
English