Method for fabricating photovoltaic device having improved short wavelength photoresponse

Patent · Tue Jul 04 00:00:00 EDT 1989

OSTI ID:867024

Catalano, Anthony W ^[1]

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1. P.O. Box 557, Rushland, PA 18956

Amorphous p-i-n silicon photovoltaic cells with improved short wavelength photoresponse are fabricated with reduced p-dopant contamination at the p/i interface. Residual p-dopants are removed by flushing the deposition chamber with a gaseous mixture capable of reacting with excess doping contaminants prior to the deposition of the i-layer and subsequent to the deposition of the p-layer.

• DOE Contract Number: ZB4030563
• Assignee: Catalano; Anthony W. (P.O. Box 557, Rushland, PA 18956)
• Patent Number(s): US 4845043
• Application Number: 07/041,532
• OSTI ID: 867024
• Country of Publication: United States
• Language: English

Related Subjects

method
fabricating
photovoltaic
device
improved
wavelength
photoresponse
amorphous
p-i-n
silicon
cells
fabricated
reduced
p-dopant
contamination
interface
residual
p-dopants
removed
flushing
deposition
chamber
gaseous
mixture
capable
reacting
excess
doping
contaminants
prior
i-layer
subsequent
p-layer
photovoltaic cells
deposition chamber
gaseous mixture
photovoltaic device
photovoltaic cell
silicon photovoltaic
wavelength photoresponse
mixture capable
/438/136/427/