Fluorination of amorphous thin-film materials with xenon fluoride

Patent · Fri Jan 01 00:00:00 EST 1988

OSTI ID:866659

Weil, Raoul B ^[1]

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1. Haifa, IL

A method is disclosed for producing fluorine-containing amorphous semiconductor material, preferably comprising amorphous silicon. The method includes depositing amorphous thin-film material onto a substrate while introducing xenon fluoride during the film deposition process.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United States Department of Energy (Washington, DC)
• Patent Number(s): US 4761302
• OSTI ID: 866659
• Country of Publication: United States
• Language: English

Related Subjects

fluorination
amorphous
thin-film
materials
xenon
fluoride
method
disclosed
producing
fluorine-containing
semiconductor
material
preferably
comprising
silicon
depositing
substrate
introducing
film
deposition
process
preferably comprising
film materials
film deposition
amorphous silicon
semiconductor material
deposition process
film material
amorphous semiconductor
thin-film material
amorphous thin-film
/427/136/