Method of depositing wide bandgap amorphous semiconductor materials

Patent · Tue Sep 29 00:00:00 EDT 1987

OSTI ID:866377

Delahoy, Alan E ^[1]

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1. Rocky Hill, NJ

A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.

• DOE Contract Number: XL3031471
• Assignee: Chronar Corp. (Princeton, NJ)
• Patent Number(s): US 4696702
• Application Number: 06/933,972
• OSTI ID: 866377
• Country of Publication: United States
• Language: English

Related Subjects

method
depositing
wide
bandgap
amorphous
semiconductor
materials
type
substrate
photosensitization
decomposition
gaseous
silanes
presence
p-type
catalytic
dopant
temperature
200
degree
pressure
range
1-50
torr
wide band
wide bandgap
semiconductor materials
semiconductor material
amorphous semiconductor
depositing wide
/438/136/427/