Reactor design for uniform chemical vapor deposition-grown films without substrate rotation

Patent · Thu Jan 01 00:00:00 EST 1987

OSTI ID:866179

Wanlass, Mark ^[1]

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1. Golden, CO

A quartz reactor vessel for growth of uniform semiconductor films includes a vertical, cylindrical reaction chamber in which a substrate-supporting pedestal provides a horizontal substrate-supporting surface spaced on its perimeter from the chamber wall. A cylindrical confinement chamber of smaller diameter is disposed coaxially above the reaction chamber and receives reaction gas injected at a tangent to the inside chamber wall, forming a helical gas stream that descends into the reaction chamber. In the reaction chamber, the edge of the substrate-supporting pedestal is a separation point for the helical flow, diverting part of the flow over the horizontal surface of the substrate in an inwardly spiraling vortex.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4649859
• OSTI ID: 866179
• Country of Publication: United States
• Language: English

Related Subjects

reactor
design
uniform
chemical
vapor
deposition-grown
films
substrate
rotation
quartz
vessel
growth
semiconductor
vertical
cylindrical
reaction
chamber
substrate-supporting
pedestal
provides
horizontal
surface
spaced
perimeter
wall
confinement
diameter
disposed
coaxially
receives
gas
injected
tangent
inside
forming
helical
stream
descends
edge
separation
flow
diverting
inwardly
spiraling
vortex
reactor design
semiconductor film
confinement chamber
supporting surface
reaction gas
chemical vapor
reaction chamber
reactor vessel
gas stream
vapor deposition
chamber wall
semiconductor films
surface spaced
disposed coaxially
horizontal surface
gas injected
uniform semiconductor
uniform chemical
pedestal provide
quartz reactor
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