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Title: Method and apparatus for increasing the durability and yield of thin film photovoltaic devices

Patent ·
OSTI ID:866122

Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
DOE Contract Number:
EG-77-C-01-4042
Assignee:
University of Delaware (Newark, DE)
Patent Number(s):
US 4640002
OSTI ID:
866122
Country of Publication:
United States
Language:
English