Method and apparatus for increasing the durability and yield of thin film photovoltaic devices
Patent
·
OSTI ID:866122
- Newark, DE
Thin film photovoltaic cells having a pair of semiconductor layers between an opaque and a transparent electrical contact are manufactured in a method which includes the step of scanning one of the semiconductor layers to determine the location of any possible shorting defect. Upon the detection of such defect, the defect is eliminated to increase the durability and yield of the photovoltaic device.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- University of Delaware (Newark, DE)
- Patent Number(s):
- US 4640002
- OSTI ID:
- 866122
- Country of Publication:
- United States
- Language:
- English
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apparatus
increasing
durability
yield
film
photovoltaic
devices
cells
pair
semiconductor
layers
opaque
transparent
electrical
contact
manufactured
step
scanning
determine
location
shorting
defect
detection
eliminated
increase
device
transparent electrical
photovoltaic devices
photovoltaic cells
electrical contact
photovoltaic device
semiconductor layer
film photovoltaic
photovoltaic cell
semiconductor layers
/438/136/219/324/356/