Process for selectively patterning epitaxial film growth on a semiconductor substrate

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865997

Sheldon, Peter ^[1]; Hayes, Russell E ^[2]

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1. Golden, CO
2. Boulder, CO

A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4614564
• OSTI ID: 865997
• Country of Publication: United States
• Language: English

Related Subjects

process
selectively
patterning
epitaxial
film
growth
semiconductor
substrate
disclosed
forming
masking
surface
layers
including
layer
disposed
covering
window
selected
portion
removing
expose
thereunder
subjected
etchant
introduced
dissolve
sufficient
amount
directly
beneath
adapted
preferentially
substantially
rate
create
overhanging
ledge
undercutting
edges
adjacent
deposited
exposed
finally
remainder
lift-off
materials
thereon
balance
layer disposed
sufficient amount
film growth
semiconductor substrate
substrate surface
deposited thereon
edge portion
selected portion
epitaxial film
layers including
selectively patterning
patterning epitaxial
exposed substrate
/438/117/257/