Electron-beam-induced information storage in hydrogenated amorphous silicon device

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865991

Yacobi, Ben G ^[1]

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1. Denver, CO

A method for recording and storing information in a hydrogenated amorphous silicon device, comprising: depositing hydrogenated amorphous silicon on a substrate to form a charge-collection device; and generating defects in the hydrogenated amorphous silicon device, wherein the defects act as recombination centers that reduce the lifetime of carriers, thereby reducing charge-collection efficiency; and thus in the charge-collection mode of scanning probe instruments, regions of the hydrogenated amorphous silicon device that contain the defects appear darker in comparison to regions of the device that do not contain the defects, leading to a contrast formation for pattern recognition and information storage, in the device, which darkened areas can be restored to their original charge-collection efficiency by heating the hydrogenated amorphous silicon to a temperature of about 100.degree. C. to 250.degree. C. for a sufficient period of time to provide for such restoration.

• Research Organization: Midwest Research Institute, Kansas City, MO (United States)
• DOE Contract Number: AC02-83CH10093
• Assignee: United State of America as represented by United States (Washington, DC)
• Patent Number(s): US 4613519
• OSTI ID: 865991
• Country of Publication: United States
• Language: English

Related Subjects

electron-beam-induced
information
storage
hydrogenated
amorphous
silicon
device
method
recording
storing
comprising
depositing
substrate
form
charge-collection
generating
defects
recombination
centers
reduce
lifetime
carriers
reducing
efficiency
mode
scanning
probe
instruments
regions
contain
appear
darker
comparison
leading
contrast
formation
pattern
recognition
darkened
restored
original
heating
temperature
100
degree
250
sufficient
period
time
provide
restoration
silicon device
pattern recognition
collection device
amorphous silicon
hydrogenated amorphous
scanning probe
collection efficiency
information storage
sufficient period
storing information
reducing charge
/427/346/365/438/