Direct determination of quantum efficiency of semiconducting films

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865742

Faughnan, Brian W ^[1]; Hanak, Joseph J ^[2]

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1. Princeton, NJ
2. Lawrenceville, NJ

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• DOE Contract Number: EG-77-C-01-4042
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4564808
• OSTI ID: 865742
• Country of Publication: United States
• Language: English

Related Subjects

direct
determination
quantum
efficiency
semiconducting
films
photovoltaic
semiconductor
samples
determined
directly
requiring
built-in
photovoltage
generated
sample
electrodes
attached
form
schottky
barrier
therewith
illuminated
photocurrent
carriers
collected
external
bias
voltage
impressed
measured
calculated
therefrom
schottky barrier
bias voltage
quantum efficiency
semiconductor sample
conducting films
semiconductor samples
semiconducting films
conducting film
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