Pure silver ohmic contacts to N- and P- type gallium arsenide materials

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865741

Hogan, Stephen J ^[1]

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1. Golden, CO

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO (United States)
• DOE Contract Number: EG-77-C-01-4042
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4564720
• OSTI ID: 865741
• Country of Publication: United States
• Language: English

Related Subjects

pure
silver
ohmic
contacts
n-
p-
type
gallium
arsenide
materials
disclosed
improved
process
manufacturing
semiconductor
devices
components
n-type
substrate
layer
p-type
diffused
comprises
forming
contact
substantially
doping
carrier
concentration
substrate layer
p-type gallium
comprises forming
layer comprises
improved process
process comprises
semiconductor device
ohmic contact
semiconductor devices
gallium arsenide
ohmic contacts
n-type layer
n-type gallium
p- type
type gallium
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