Photoelectrochemical cell having photoanode with thin boron phosphide coating as a corrosion resistant layer
Patent
·
OSTI ID:864924
- Albuquerque, NM
A surface prone to corrosion in corrosive environments is rendered anticorrosive by CVD growing a thin continuous film, e.g., having no detectable pinholes, thereon, of boron phosphide. In one embodiment, the film is semiconductive. In another aspect, the invention is an improved photoanode, and/or photoelectrochemical cell with a photoanode having a thin film of boron phosphide thereon rendering it anitcorrosive, and providing it with unexpectedly improved photoresponsive properties.
- Research Organization:
- AT&T
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4438183
- OSTI ID:
- 864924
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
photoelectrochemical
cell
photoanode
boron
phosphide
coating
corrosion
resistant
layer
surface
prone
corrosive
environments
rendered
anticorrosive
cvd
growing
continuous
film
detectable
pinholes
thereon
embodiment
semiconductive
aspect
improved
rendering
anitcorrosive
providing
unexpectedly
photoresponsive
properties
photoelectrochemical cell
corrosive environment
corrosion resistant
electrochemical cell
boron phosphide
corrosive environments
resistant layer
continuous film
/429/204/
cell
photoanode
boron
phosphide
coating
corrosion
resistant
layer
surface
prone
corrosive
environments
rendered
anticorrosive
cvd
growing
continuous
film
detectable
pinholes
thereon
embodiment
semiconductive
aspect
improved
rendering
anitcorrosive
providing
unexpectedly
photoresponsive
properties
photoelectrochemical cell
corrosive environment
corrosion resistant
electrochemical cell
boron phosphide
corrosive environments
resistant layer
continuous film
/429/204/