Method for forming indium oxide/n-silicon heterojunction solar cells

Patent · Tue Mar 13 00:00:00 EST 1984

OSTI ID:864914

Feng, Tom ^[1]; Ghosh, Amal K ^[2]

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1. Morris Plains, NJ
2. New Providence, NJ

A high photo-conversion efficiency indium oxide/n-silicon heterojunction solar cell is spray deposited from a solution containing indium trichloride. The solar cell exhibits an Air Mass One solar conversion efficiency in excess of about 10%.

• Research Organization: Exxon Research and Engineering Company
• DOE Contract Number: XJ-0-9077-1
• Assignee: Exxon Research and Engineering Co. (Florham Park, NJ)
• Patent Number(s): US 4436765
• Application Number: 06/422,668
• OSTI ID: 864914
• Country of Publication: United States
• Language: English

Related Subjects

method
forming
indium
oxide
n-silicon
heterojunction
solar
cells
photo-conversion
efficiency
cell
spray
deposited
solution
containing
trichloride
exhibits
air
mass
conversion
excess
10
n-silicon heterojunction
air mass
heterojunction solar
indium oxide
conversion efficiency
solution containing
solar cell
solar cells
junction solar
spray deposited
cell exhibits
solar conversion
indium trichloride
photo-conversion efficiency
efficiency indium
containing indium
/438/136/427/