Photosensitivity enhancement of PLZT ceramics by positive ion implantation

Patent · Sat Jan 01 00:00:00 EST 1983

OSTI ID:864608

Land, Cecil E ^[1]; Peercy, Paul S ^[1]

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1. Albuquerque, NM

The photosensitivity of lead lanthanum zirconate titanate (PLZT) ceramic material used in high resolution, high contrast, and non-volatile photoferroelectric image storage and display devices is enhanced significantly by positive ion implantation of the PLZT near its surface. Implanted ions include H.sup.+, He.sup.+, Ne.sup.+, Ar.sup.+, as well as chemically reactive ions from Fe, Cr, and Al. The positive ion implantation advantageously serves to shift the absorption characteristics of the PLZT material from near-UV light to visible light. As a result, photosensitivity enhancement is such that the positive ion implanted PLZT plate is sensitive even to sunlight and conventional room lighting, such as fluorescent and incandescent light sources. The method disclosed includes exposing the PLZT plate to the positive ions at sufficient density, from 1.times.10.sup.12 to 1.times.10.sup.17, and with sufficient energy, from 100 to 500 KeV, to provide photosensitivity enhancement. The PLZT material may have a lanthanum content ranging from 5 to 10%, a lead zirconate content of 62 to 70 mole %, and a lead titanate content of 38 to 30%. The ions are implanted at a depth of 0.1 to 2 microns below the surface of the PLZT plate.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• DOE Contract Number: AT(29-1)-789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4391901
• OSTI ID: 864608
• Country of Publication: United States
• Language: English

Related Subjects

photosensitivity
enhancement
plzt
ceramics
positive
implantation
lead
lanthanum
zirconate
titanate
ceramic
material
resolution
contrast
non-volatile
photoferroelectric
image
storage
display
devices
enhanced
significantly
near
surface
implanted
chemically
reactive
advantageously
serves
shift
absorption
characteristics
near-uv
light
visible
result
plate
sensitive
sunlight
conventional
lighting
fluorescent
incandescent
sources
method
disclosed
exposing
sufficient
density
times
10
12
17
energy
100
500
kev
provide
content
ranging
62
70
mole
38
30
depth
microns
below
absorption characteristics
chemically react
sufficient density
zirconate titanate
sufficient energy
ceramic material
light source
visible light
light sources
method disclosed
display device
chemically reactive
lanthanum zirconate
lead lanthanum
lead zirconate
ceramic mater
plzt ceramics
/430/252/359/365/501/