Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent

Patent · Fri Jan 01 00:00:00 EST 1982

OSTI ID:864334

Lundberg, Lynn B ^[1]

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1. Los Alamos, NM

A method of growing single crystals of beta SiC from solution using molten lithium as a solvent for polycrystalline SiC feed material. Reasonable growth rates are accomplished at temperatures in the range of about 1330.degree. C. to about 1500.degree. C.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4349407
• OSTI ID: 864334
• Country of Publication: United States
• Language: English

Related Subjects

method
forming
single
crystals
beta
silicon
carbide
liquid
lithium
solvent
growing
sic
solution
molten
polycrystalline
feed
material
reasonable
growth
rates
accomplished
temperatures
range
1330
degree
1500
growth rate
liquid lithium
molten lithium
feed material
silicon carbide
single crystal
single crystals
beta silicon
growth rates
growing single
sic feed
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