Apparatus for growing HgI.sub.2 crystals

Patent · Sun Jan 01 00:00:00 EST 1978

OSTI ID:863107

Schieber, Michael M ^[1]; Beinglass, Israel ^[1]; Dishon, Giora ^[1]

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1. Jerusalem, IL

A method and horizontal furnace for vapor phase growth of HgI.sub.2 crystals which utilizes controlled axial and radial airflow to maintain the desired temperature gradients. The ampoule containing the source material is rotated while axial and radial air tubes are moved in opposite directions during crystal growth to maintain a desired distance and associated temperature gradient with respect to the growing crystal, whereby the crystal interface can advance in all directions, i.e., radial and axial according to the crystallographic structure of the crystal. Crystals grown by this method are particularly applicable for use as room-temperature nuclear radiation detectors.

• Research Organization: Hebrew University Of Jerusalem
• DOE Contract Number: E(29-1)-1183
• Assignee: United States Department of Energy (Washington, DC)
• Patent Number(s): US 4094268
• OSTI ID: 863107
• Country of Publication: United States
• Language: English

Related Subjects

apparatus
growing
hgi
crystals
method
horizontal
furnace
vapor
phase
growth
utilizes
controlled
axial
radial
airflow
maintain
desired
temperature
gradients
ampoule
containing
source
material
rotated
air
tubes
moved
opposite
directions
crystal
distance
associated
gradient
respect
whereby
interface
advance
according
crystallographic
structure
grown
particularly
applicable
room-temperature
nuclear
radiation
detectors
crystals grown
air tubes
opposite direction
nuclear radiation
opposite directions
particularly applicable
temperature gradient
source material
radiation detector
crystal growth
radiation detectors
vapor phase
temperature gradients
desired temperature
radial air
radial airflow
phase growth
graphic structure
crystallographic structure
utilizes controlled
growing crystal
horizontal furnace
temperature nuclear
ampoule containing
air tube
controlled axial
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