Electronic and Optical Properties of Energetic Particle-IrradiatedIn-rich InGaN
We have carried out a systematic study of the effects of irradiation on the electronic and optical properties of InGaN alloys over the entire composition range. High energy electrons, protons, and {sup 4}He{sup +} were used to produce displacement damage doses (D{sub d}) spanning over five orders of magnitude. The free electron concentrations in InN and In-rich InGaN increase with D{sub d} and finally saturate after a sufficiently high D{sub d}. The saturation of carrier density is attributed to the formation of native donors and the Fermi level pinning at the Fermi Stabilization Energy (E{sub FS}), as predicted by the amphoteric native defect model. Electrochemical capacitance-voltage (ECV) measurements reveal a surface electron accumulation whose concentration is determined by pinning at E{sub FS}.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division; Office of NavalResearch Contract N000149910936
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 861520
- Report Number(s):
- LBNL-57464; R&D Project: M50020; BnR: 400403909; TRN: US200601%%899
- Resource Relation:
- Conference: 2005 Materials Research Society Spring Meeting,San Francisco, CA, March 28-April 15, 2005
- Country of Publication:
- United States
- Language:
- English
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