Isotopically controlled semiconductors
A review of recent research involving isotopically controlled semiconductors is presented. Studies with isotopically enriched semiconductor structures experienced a dramatic expansion at the end of the Cold War when significant quantities of enriched isotopes of elements forming semiconductors became available for worldwide collaborations. Isotopes of an element differ in nuclear mass, may have different nuclear spins and undergo different nuclear reactions. Among the latter, the capture of thermal neutrons which can lead to neutron transmutation doping, can be considered the most important one for semiconductors. Experimental and theoretical research exploiting the differences in all the properties has been conducted and will be illustrated with selected examples. Manuel Cardona, the longtime editor-in-chief of Solid State Communications has been and continues to be one of the major contributors to this field of solid state physics and it is a great pleasure to dedicate this review to him.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of Basic EnergySciences. Materials Science and Engineering Division; National ScienceFoundation Grant DMR-0109844; Max-Planck Society
- DOE Contract Number:
- DE-AC02-05CH11231
- OSTI ID:
- 861238
- Report Number(s):
- LBNL-56781; R&D Project: 513310; BnR: KC0201030; TRN: US200601%%733
- Journal Information:
- Journal of Nuclear Science and Technology, Vol. 39, Issue 4; Related Information: Journal Publication Date: 04/2002
- Country of Publication:
- United States
- Language:
- English
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