ScanningTunneling Luminescence of Grain Boundaries in Cu(In,Ga)Se2
At the Laboratory, photon emission in semiconductors has been mapped in the nanoscale using scanning tunneling microscopy (STM). In this Solar Program Review Meeting, we report on the latest results obtained in Cu(In,Ga)Se2 (CIGS) thin films by this adapted STM. Scanning tunneling luminescence (STL) spectroscopy suggests that photons are emitted near the surface of CIGS. STL is excited either by (1) diffusion of tunneling electrons and subsequent recombination with available holes in CIGS or (2) impact ionization by hot electrons. Which process becomes predominant depends on the voltage applied to the STM tip. Photon mapping shows electronically active, extended defects near the surface of CIGS thin films.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 860489
- Report Number(s):
- NREL/CP-520-36975; TRN: US200524%%212
- Resource Relation:
- Related Information: Presented at the 2004 DOE Solar Energy Technologies Program Review Meeting, 25-28 October 2004, Denver, Colorado. Also included in the proceedings available on CD-ROM (DOE/GO-102005-2067; NREL/CD-520-37140)
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
DEFECTS
DIFFUSION
ELECTRONS
GRAIN BOUNDARIES
IONIZATION
LUMINESCENCE
PHOTON EMISSION
PHOTONS
RECOMBINATION
SCANNING TUNNELING MICROSCOPY
SPECTROSCOPY
THIN FILMS
TUNNELING
SOLAR ENERGY
PV
NANOSCALE
SCANNING TUNNELING MICROSCOPY (STM)
FILMS
SCANNING TUNNELING LUMINESCENCE (STL)
PHOTON
Solar Energy - Photovoltaics