Depth and Thermal Stability of Dry Etch Damage in GaN Schottky Diodes

Journal Article · Tue Jul 06 00:00:00 EDT 1999 · Applied Physics Letters

OSTI ID:8483

Baca, A G; Cao, X A; Cho, H; Dang, G T; Hickman, R; Pearton, S J; Ren, F; Shul, R J; Van Hove, J M; Zhang, A P; Zhang, L

GaN Schottky diodes were exposed to N₂ or H₂ Inductively Coupled Plasmas prior to deposition of the rectifying contact. Subsequent annealing, wet photochemical etching or (NH₄)₂S surface passivation treatments were examined for their effect on diode current- voltage characteristics. We found that either annealing at 750 °C under N₂, or removal of ~500-600 Å of the surface essentially restored the initial I-V characteristics. There was no measurable improvement in the plasma-exposed diode behavior with (NH₄)₂S treatments.

• Research Organization: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 8483
• Report Number(s): SAND99-1683J; ON: DE00008483
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
Schottky Barrier Diodes
Damage
Etching
Depth
Stability
Temperature Dependence