Recent developments in semiconductor gamma-ray detectors
The successful development of lithium-drifted Ge detectors in the 1960's marked the beginning of the significant use of semiconductor crystals for direct detection and spectroscopy of gamma rays. In the 1970's, high-purity Ge became available, which enabled the production of complex detectors and multi-detector systems. In the following decades, the technology of semiconductor gamma-ray detectors continued to advance, with significant developments not only in Ge detectors but also in Si detectors and room-temperature compound-semiconductor detectors. In recent years, our group at Lawrence Berkeley National Laboratory has developed a variety of gamma ray detectors based on these semiconductor materials. Examples include Ge strip detectors, lithium-drifted Si strip detectors, and coplanar-grid CdZnTe detectors. These advances provide new capabilities in the measurement of gamma rays, such as the ability to perform imaging and the realization of highly compact spectroscopy systems.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE. Administrator for National Nuclear Security Administration Nonproliferation and National Security Program Direction (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 841558
- Report Number(s):
- LBNL-52403; R&D Project: RNN101; TRN: US200515%%207
- Resource Relation:
- Conference: Methods and Applications of Radioanalytical Chemistry - VI, Kailua-Kona, HI (US), 04/07/2003--04/11/2003; Other Information: PBD: 28 Oct 2003
- Country of Publication:
- United States
- Language:
- English
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