Nb-3{sub Sn} layers on high-purity Nb cavities with very high quality factors and accelerating gradients
We have optimized the vapor diffusion technique to coat high-purity Nb cavities up to RRR=1000 with a micronthick Nb3Sn layer without loss of the thermal stabilization of defects. Systematic measurements on samples have shown no change of RRR of the bulk Nb and homogeneously nucleated growth of the Nb3Sn layers. Rinsing of such layers just with high pressure water resulted in low field emission activity and residual surface resistance values in the nW range, i.e. comparable to the best Nb surfaces. Single-cell 1.5 GHz cavities provided Q0 values up to 1011 at 2 K and above 1010 at 4.2 K, which stayed nearly constant up to peak electric surface fields of 10 MV/m but decreased to about 109 at 20 MV/m. No field emission and no quench could be observed in these cavities up to the maximum achievable accelerating gradients of about 15 MV/m at 2 K as limited by the available rf power. The performance of the Nb3Sn cavities at 4.2 K exceeds the design value of the CEBAF Nb cavities at 2 K. First results on a five-cell cavity are promising.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 838129
- Report Number(s):
- JLAB-ACT-96-08; DOE/ER/40150-3235; TRN: US0501231
- Resource Relation:
- Conference: EPAC 96, Sitges (ES), 06/10/1996--06/14/1996; Other Information: PBD: 1 Jun 1996
- Country of Publication:
- United States
- Language:
- English
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