Influence of the Sb dopant distribution on far infrared photoconductivity in Ge:Sb blocked impurity band detectors
Extended long wavelength response to {approx}200 {micro}m (50 cm{sup -1}) has been observed in Ge:Sb Blocked Impurity Band (BIB) detectors with N{sub D} {approx} 1 x 10{sup 16} cm{sup -3}. The cut-off wavelength increases from 150 {micro}m (65 cm{sup -1}) to 200 {micro}m (50 cm{sup -1}) with increasing bias. The responsivity at long wavelengths was lower than expected. This can be explained by considering the observed Sb diffusion profile in a transition region between the blocking layer and active layer. BIB modeling is presented which indicates that this Sb concentration profile increases the electric field in the transition region and reduces the field in the blocking layer. The depletion region consists partially of the transition region between the active and blocking layer, which could contribute to the reduced long wavelength response. The field spike at the interface is the likely cause of breakdown at a lower bias than expected.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- National Aeronautics and Space Administration (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 837727
- Report Number(s):
- LBNL-49589; R&D Project: 43DL01; TRN: US200506%%358
- Journal Information:
- Infrared Physics and Technology, Vol. 43, Issue 6; Other Information: Submitted to Infrared Physics and Technology: Volume 43, No.6; Journal Publication Date: 12/2002; PBD: 6 Feb 2002
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparative Analysis of the Luminescence of Ge:Sb Layers Grown on Ge(001) and Si(001) Substrates
Advanced far infrared blocked impurity band detectors based on germanium liquid phase epitaxy