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Title: Nitrogen effects on crystallization kinetics of amorphous TiOxNy thin films

Journal Article · · Journal of Materials Research
OSTI ID:835806

The crystallization behavior of amorphous TiOxNy (x>>y) thin films was investigated by in-situ transmission electron microscopy. The Johnson-Mehl-Avrami-Kozolog (JMAK) theory is used to determine the Avrami exponent, activation energy, and the phase velocity pre-exponent. Addition of nitrogen inhibits diffusion, increasing the nucleation temperature, while decreasing the growth activation energy. Kinetic variables extracted from individual crystallites are compared to JMAK analysis of the fraction transformed and a change of 6 percent in the activation energy gives agreement between the methods. From diffraction patterns and index of refraction the crystallized phase was found to be predominantly anatase.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director, Office of Science. Office of Basic Energy Sciences. Division of Materials Sciences (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
835806
Report Number(s):
LBNL-47681; R&D Project: 503601; TRN: US200503%%60
Journal Information:
Journal of Materials Research, Vol. 17, Issue 3; Other Information: Submitted to Journal of Materials Research: Volume 17, No.3; Journal Publication Date: 03/2002; PBD: 30 Mar 2001
Country of Publication:
United States
Language:
English