U.S. Department of EnergyOffice of Scientific and Technical Information
Proton irradiation effects on 2Gb flash memory
Abstract
The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices after exposure to 200 MeV protons to various doses up to 83 krad(Si). They characterize observed failures and single event upsets on 22 devices from two different lots. Devices from both lots are robust to greater than 20 krad(Si) although they see evidence for lot-to-lot variation where only one lot appears robust up to about 50 krad(Si). Single event upsets are observed at a relatively low rate and are consistent with single isolated bit flips within registers that transfer bits to and from the flash memory cells.
- Authors:
- Publication Date:
- Research Org.:
- Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 828162
- Report Number(s):
- FERMILAB-Conf-04-143-E
TRN: US0504234
- DOE Contract Number:
- AC02-76CH03000
- Resource Type:
- Conference
- Resource Relation:
- Conference: IEEE NSREC Conference Record
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 43 PARTICLE ACCELERATORS; IRRADIATION; MEMORY DEVICES; PROTONS
Citation Formats
Wester, William, Nelson, Charles, and Marriner, John. Proton irradiation effects on 2Gb flash memory. United States: N. p., 2004.
Web.
Wester, William, Nelson, Charles, & Marriner, John. Proton irradiation effects on 2Gb flash memory. United States.
Wester, William, Nelson, Charles, and Marriner, John. 2004.
"Proton irradiation effects on 2Gb flash memory". United States. https://www.osti.gov/servlets/purl/828162.
@article{osti_828162,
title = {Proton irradiation effects on 2Gb flash memory},
author = {Wester, William and Nelson, Charles and Marriner, John},
abstractNote = {The authors report total ionizing dose and single event effects on 2Gb Samsung flash memory devices after exposure to 200 MeV protons to various doses up to 83 krad(Si). They characterize observed failures and single event upsets on 22 devices from two different lots. Devices from both lots are robust to greater than 20 krad(Si) although they see evidence for lot-to-lot variation where only one lot appears robust up to about 50 krad(Si). Single event upsets are observed at a relatively low rate and are consistent with single isolated bit flips within registers that transfer bits to and from the flash memory cells.},
doi = {},
url = {https://www.osti.gov/biblio/828162},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Aug 18 00:00:00 EDT 2004},
month = {Wed Aug 18 00:00:00 EDT 2004}
}
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.