Proton radiation damage in P-channel CCDs fabricated on high-resistivity silicon
Conference
·
OSTI ID:826086
P-channel, backside illuminated silicon CCDs were developed and fabricated on high-resistivity n-type silicon. Devices have been exposed up to 1x1011 protons/cm2 at 12 MeV. The charge transfer efficiency and dark current were measured as a function of radiation dose. These CCDs were found to be significantly more radiation tolerant than conventional n-channel devices. This could prove to be a major benefit for long duration space missions.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Director. Office of Science. Office of High Energy Physics; NSF/ATI, NASA/SADD, USAF (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 826086
- Report Number(s):
- LBNL-49929; R&D Project: PS1521; TRN: US200424%%432
- Resource Relation:
- Conference: IEEE Transactions Nuclear Science, San Diego, CA (US), 11/06/2001; Other Information: PBD: 28 Jul 2002
- Country of Publication:
- United States
- Language:
- English
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