Open questions in electronic sputtering of solids by slow highly charged ions with respect to applications in single ion implantation
Conference
·
OSTI ID:823216
In this article we discuss open questions in electronic sputtering of solids by slow, highly charged ions in the context of their application in a single ion implantation scheme. High yields of secondary electrons emitted when highly charged dopant ions impinge on silicon wafers allow for formation of non-Poissonian implant structures such as single atom arrays. Control of high spatial resolution and implant alignment require the use of nanometer scale apertures. We discuss electronic sputtering issues on mask lifetimes, and damage to silicon wafers.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE; National Security Agency and Advanced Research and Development Activity under Army Research Office Contract MOD707501 (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 823216
- Report Number(s):
- LBNL-53393; R&D Project: 43GW01; TRN: US200415%%281
- Resource Relation:
- Conference: 16th International Conference on Ion Beam Analysis, Albuquerque, NM (US), 06/30/2003--07/04/2003; Other Information: PBD: 16 Jul 2003
- Country of Publication:
- United States
- Language:
- English
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