Measurement of the Auger Recombination Rate in p-type 0.54-eV GaInAsSb by Time-Resolved Photoluminescence
Auger recombination in p-type GaSb, InAs and their alloys is enhanced due to the proximity of the bandgap energy and the energy separation to the spin split-off valence band. This can affect the device performance even at moderate doping concentration. They report electron lifetime measurements in a p-type 0.54-eV GaInAsSb alloy, commonly used in a variety of infrared devices. They have studied a series of double-capped heterostructures with varied thicknesses and doping levels, grown by organometallic vapor phase epitaxy on GaSb substrates. The Auger coefficient value of 2.3 x 10{sup -28} cm{sup 6}/s is determined by analyzing the photoluminescence decay constants with a systematic separation of different recombination mechanisms.
- Research Organization:
- Lockheed Martin Corporation, Schenectady, NY 12301 (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC12-00SN39357
- OSTI ID:
- 821378
- Report Number(s):
- LM-03K053; TRN: US200411%%42
- Resource Relation:
- Other Information: PBD: 13 Jun 2003
- Country of Publication:
- United States
- Language:
- English
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